rfsemi technologies, inc. rev. 6 n-channel junction fet RJN1164 electret capacitor microphone applications features specially suited for use in audio and telephone electret capacitor microphones excellent voltage gain very low noise high esd voltage ultra-small size package applications cellular phones portable audio pdas mp3 players package type : sot-400 [unit:mm] [top view] [side view] 1. drain 2. source 3. gate absolute maximum ratings at ta = 25 o c parameter symbol ratings unit gate-to-drain voltage v gdo -20 v gate current i g 10 ma drain current i d 10 ma allowable power dissipation p d 100 mw junction temperature tj 150 o c storage temperature tstg -55 to +150 o c electrical characteristics at ta = 25 o c ratings parameter symbol conditions min typ max unit gate-to-drain breakdown voltage v (br)gdo i g = -100 a -20 v cutoff voltage v gs(off) v ds = 5v, i d = 1 a -0.2 -0.6 -1.5 v zero-gate voltage drain current i dss v ds = 5v, v gs = 0 70* 430* a forward transfer admittance | yfs | v ds = 5v, v gs = 0, f = 1khz 0.4 1.2 ms input c apacitance ciss v ds = 5v, v gs = 0, f = 1mhz 3.5 pf reverse transfer capacitance crss v ds = 5v, v gs = 0, f = 1mhz 0.8 pf * the RJN1164 is classified by i dss as follows classification a1 a2 b c d i dss ( a) 70~120 100~170 150~270 210~350 320~430 0.31 0.03 0.21 0.03 1.60 0.05 0.80 0.05 1.40 0.01 2 3 1 0.21 0.03 0.5 0.05 0~0.02 max 0.42 0.15
RJN1164 rfsemi technologies, inc. rev. 6 electrical characteristics parameter symbol conditions min typ max unit [ta = 25 o c , v cc = 4.5v, r l = 1k ? , c in = 15pf, see specified test circuit.] voltage gain g v v in = 10 mv, f = 1khz -3.0 db reduced voltage characteristics ? g vv v in = 10 mv, v cc = 4.5 -> 1.5v -1.2 -3.5 db frequency characteristics ? g vf f = 1khz to 110hz -1.0 db input impedance z in f = 1khz 30 m ? output impedance z o f = 1khz 700 ? total harmonic distortion thd v in = 10mv, f = 1khz 1.0 % output noise voltage v no v in = 0, a curve -110 db test circuit voltage gain frequency characteristics distortion reduced voltage characteristics i d - v ds drain - to - source voltage, v ds - v 012345 drain current, i d - a 0 100 200 300 400 500 - 0 . 1 v - 0 . 2 v - 0 . 3 v - 0 .4 v -0.5v v g s = 0 v i d - v ds drain - to - source voltage, v ds - v 0246810 drain current, i d - a 0 100 200 300 400 500 - 0 . 1 v - 0 . 2 v - 0 . 3 v - 0 . 4 v - 0 . 5 v v g s = 0 v b osc v thd vcc = 4.5 v 1k ? a output impedance 1k ? 15 pf 33 f v tvm vcc = 1.5 v
RJN1164 rfsemi technologies, inc. rev. 6 i d - v gs gate - to - source voltage, v gs - v -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0 200 400 600 800 1,000 drain current, i d - a v ds = 5v i d s s = 6 5 0 a 4 2 0 a 2 0 0 a v gs(off) - i dss drain current, i dss - a 50 70 200 300 500 700 2000 100 1000 cutoff voltage, v gs(off) - v 0.2 0.3 0.5 0.7 2 -0.1 -1 v ds = 5v i d = 1 a ciss - v ds drain - to - source voltage, v ds - v 0.7 2 3 5 7 20 30 110 input capacitance, ciss - pf 2 3 5 7 20 1 10 v gs = 0 f = 1mhz l yfs l - i dss drain current, i dss - a 50 70 200 300 500 700 2000 100 1000 forward transfer admittance, l y fs l - ms 0.2 0.3 0.5 0.7 2 3 5 1 v ds = 5v v gs = 0v f = 1khz crss - v ds drain - to - voltage, v ds - v 0.7 2 3 5 7 20 110 reverse transfer capacitance, crss - pf 0.2 0.3 0.5 0.7 2 3 5 0.1 1 v gs = 0 f = 1mhz g v - i dss drain current, i dss - a 50 70 200 300 500 700 100 1000 voltage gain, g v -db -10 -8 -6 -4 -2 0 2 g v : v cc = 5v v in = 10mv r l = 1.0k ? f = 1khz i dss : v ds = 5.0v
RJN1164 rfsemi technologies, inc. rev. 6 ambient temperature, ta - o c 0 20406080100120140160 allowable power dissipation, p d -m w 0 20 40 60 80 100 120 p d - ta 0 40 80 120 160 200 240 0.5 0.7 2 3 5 7 20 30 1 10 thd - v in total harmonic distortion, thd - % input voltage, v in - mv thd : v cc = 4.5v f = 1khz i dss : v ds = 5.0v 4 0 0 a 3 0 0 a i d s s = 1 0 0 a ? g vv - i dss drain current, i dss - a 50 70 200 300 500 700 100 1000 reduced voltage characteristics, ? g vv - db -5 -4 -3 -2 -1 0 1 2 3 ? g vv : v cc = 4.5v to 1.5v v in = 10mv f=1khz i dss : v ds = 5.0v 50 70 200 300 500 700 100 1000 0.3 0.5 0.7 2 3 5 1 thd - i dss total harmonic distortion, thd - % drain current, i dss - a thd : v cc = 4.5v v in = 30mv f = 1khz i dss : v ds = 5.0v z in - i dss drain current, i dss - a 50 70 200 300 500 700 100 1000 input impedance, z in - m ? 36 38 40 42 44 z in : v cc = 4.5v v in = 10mv f = 1khz i dss : v ds = 5.0v z o - i dss drain current, i dss - a 50 70 200 300 500 700 100 1000 output impedance, z o - ? 200 300 400 500 600 700 z o : v cc = 4.5v v in = 10mv f = 1khz i dss : v ds = 5.0v
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